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Volumn 13, Issue 12, 2010, Pages

Sputtering effect on amorphous Ga-In-Zn-O thin-film surface: Occurrence of subgap and metallic states

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL STATE; FERMI ENERGY; HIGH RESOLUTION; METALLIC STATE; ORBITALS; SPUTTERING EFFECTS; VALENCE-BAND MAXIMUMS;

EID: 77958477649     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3494033     Document Type: Article
Times cited : (10)

References (10)
  • 1
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    • DOI 10.1126/science.1083212
    • K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science SCIEAS 0036-8075, 300, 1269 (2003). 10.1126/science.1083212 (Pubitemid 36621429)
    • (2003) Science , vol.300 , Issue.5623 , pp. 1269-1272
    • Nomura, K.1    Ohta, H.2    Ueda, K.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 2
    • 9744248669 scopus 로고    scopus 로고
    • Roomerature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    • DOI 10.1038/nature03090
    • K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature NATUAS 0028-0836, 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
    • (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
    • Nomura, K.1    Ohta, H.2    Takagi, A.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 3
    • 33745435681 scopus 로고    scopus 로고
    • Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
    • DOI 10.1016/j.jnoncrysol.2006.01.073, PII S0022309306002936
    • H. Hosono, J. Non-Cryst. Solids JNCSBJ 0022-3093, 352, 851 (2006). 10.1016/j.jnoncrysol.2006.01.073 (Pubitemid 43949008)
    • (2006) Journal of Non-Crystalline Solids , vol.352 , Issue.SPEC. ISS. , pp. 851-858
    • Hosono, H.1
  • 5
    • 34547365696 scopus 로고    scopus 로고
    • Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
    • DOI 10.1063/1.2753107
    • J.-S. Park, J. K. Jeong, Y.-G. Mo, H. D. Kim, and S.-I. Kim, Appl. Phys. Lett. APPLAB 0003-6951, 90, 262106 (2007). 10.1063/1.2753107 (Pubitemid 47141109)
    • (2007) Applied Physics Letters , vol.90 , Issue.26 , pp. 262106
    • Park, J.-S.1    Jeong, J.K.2    Mo, Y.-G.3    Kim, H.D.4    Kim, S.-I.5
  • 8
    • 0038968427 scopus 로고    scopus 로고
    • RSINAK 0034-6748,. 10.1063/1.1370563
    • M.-K. Lee and H.-J. Shin, Rev. Sci. Instrum. RSINAK 0034-6748, 72, 2605 (2001). 10.1063/1.1370563
    • (2001) Rev. Sci. Instrum. , vol.72 , pp. 2605
    • Lee, M.-K.1    Shin, H.-J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.