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Volumn 99, Issue 25, 2011, Pages

Optoelectronic behaviors and carrier dynamics of individual localized luminescent centers in InGaN quantum-well light emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION BARRIERS; CARRIER DYNAMICS; EMISSION CENTERS; LATERAL DIMENSION; LOCALIZATION CENTERS; LUMINESCENT CENTERS; NON-RADIATIVE RECOMBINATIONS; PL LIFETIME; POTENTIAL FLUCTUATIONS; QUANTUM WELL; TEMPORALLY RESOLVED; TRANSITION ENERGY; TRAP CENTER;

EID: 84555202755     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3671092     Document Type: Article
Times cited : (14)

References (19)
  • 2
    • 0032516703 scopus 로고    scopus 로고
    • 10.1126/science.281.5379.956
    • S. Nakamura, Science 281, 956 (1998). 10.1126/science.281.5379.956
    • (1998) Science , vol.281 , pp. 956
    • Nakamura, S.1
  • 19
    • 84855729068 scopus 로고    scopus 로고
    • See supplementary material at E-APPLAB-99-052151 for detail description of experimental techniques and data analyses procedures
    • See supplementary material at http://dx.doi.org/10.1063/1.3671092 E-APPLAB-99-052151 for detail description of experimental techniques and data analyses procedures.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.