-
1
-
-
79959314426
-
Packaging technology for electronics applications in harsh, high-temperature environments
-
P. Zheng, P. Henson, and R.W. Johnson Packaging technology for electronics applications in harsh, high-temperature environments Proc IEEE Trans Industr Electron 58 7 2011 2673 2682
-
(2011)
Proc IEEE Trans Industr Electron
, vol.58
, Issue.7
, pp. 2673-2682
-
-
Zheng, P.1
Henson, P.2
Johnson, R.W.3
-
2
-
-
34547132070
-
Power device packaging technologies for extreme environments
-
R.W. Johnson, C. Wang, Y. Liu, and J.D. Scofield Power device packaging technologies for extreme environments Proc IEEE Trans Electron Packaging Manuf 30 3 2007 182 193
-
(2007)
Proc IEEE Trans Electron Packaging Manuf
, vol.30
, Issue.3
, pp. 182-193
-
-
Johnson, R.W.1
Wang, C.2
Liu, Y.3
Scofield, J.D.4
-
3
-
-
80053557512
-
High-temperature die-attaches for sic power devices
-
EPE
-
Masson A, Buttay C, Morel H, Raynaud C, Hascoet S, Gremillard L. High-temperature die-attaches for sic power devices. In: Proceedings of the 2011-14th European conference on power electronics and applications. EPE; 2011. p. 1-10.
-
(2011)
Proceedings of the 2011-14th European Conference on Power Electronics and Applications
, pp. 1-10
-
-
Masson, A.1
Buttay, C.2
Morel, H.3
Raynaud, C.4
Hascoet, S.5
Gremillard, L.6
-
4
-
-
48349093154
-
Survey on high-temperature packaging materials for SiC-based power electronics modules
-
PESC
-
Coppola L, Huff D, Wang F, Burgos R, Boroyevich D. Survey on high-temperature packaging materials for SiC-based power electronics modules. In: Proceedings of the IEEE power electronics specialist conference. PESC; 2007. p. 2234-40.
-
(2007)
Proceedings of the IEEE Power Electronics Specialist Conference
, pp. 2234-2240
-
-
Coppola, L.1
Huff, D.2
Wang, F.3
Burgos, R.4
Boroyevich, D.5
-
5
-
-
84455164156
-
Die attach materials for high temperature applications: A review
-
V.R. Manikam, and Kuan Yew Cheong Die attach materials for high temperature applications: a review Proc IEEE 1 4 2011 457 478
-
(2011)
Proc IEEE
, vol.1
, Issue.4
, pp. 457-478
-
-
Manikam, V.R.1
Cheong, K.Y.2
-
6
-
-
67349103413
-
Die-attachment solutions for SiC power devices
-
R. Kisiel, and Z. Szczepanski Die-attachment solutions for SiC power devices Microelectron Reliab 49 2009 627 629
-
(2009)
Microelectron Reliab
, vol.49
, pp. 627-629
-
-
Kisiel, R.1
Szczepanski, Z.2
-
7
-
-
77957778805
-
Transient liquid phase die attach for high-temperature silicon carbide power devices
-
H.A. Mustain, W.D. Brown, and S.S. Ang Transient liquid phase die attach for high-temperature silicon carbide power devices IEEE Trans Compon Packaging Technol 33 3 2010 563 570
-
(2010)
IEEE Trans Compon Packaging Technol
, vol.33
, Issue.3
, pp. 563-570
-
-
Mustain, H.A.1
Brown, W.D.2
Ang, S.S.3
-
8
-
-
84866730676
-
-
MIL-STD-750D
-
MIL-STD-750D.
-
-
-
-
9
-
-
84866729507
-
-
MIL-STD-883H
-
MIL-STD-883H.
-
-
-
-
10
-
-
79959301039
-
SiC Schottky diodes for harsh environment space applications
-
July
-
P. Godignon, X. Jordà, M. Vellvehi, X. Perpiñà, V. Banu, and D. López SiC Schottky diodes for harsh environment space applications IEEE Trans Industr Electron 58 7 2011 2582 2589 July
-
(2011)
IEEE Trans Industr Electron
, vol.58
, Issue.7
, pp. 2582-2589
-
-
Godignon, P.1
Jordà, X.2
Vellvehi, M.3
Perpiñà, X.4
Banu, V.5
López, D.6
-
11
-
-
84866729506
-
-
www.comsol.com.
-
-
-
-
12
-
-
84866736806
-
Development and evaluation of a SiC Schottky diode for harsh environment space applications
-
Massetti S, Godignon P, Ciancetta E, Lopez D, Meurer R, Baur C, Jordà X. Development and evaluation of a SiC Schottky diode for harsh environment space applications. In: Proceedings of the ESPC; 2011.
-
(2011)
Proceedings of the ESPC
-
-
Massetti, S.1
Godignon, P.2
Ciancetta, E.3
Lopez, D.4
Meurer, R.5
Baur, C.6
Jordà, X.7
-
13
-
-
0035304065
-
Review on materials, microsensors, systems, and devices for high-temperature and harsh-environment applications
-
M.R. Werner, and W.R. Fahrner Review on materials, microsensors, systems, and devices for high-temperature and harsh-environment applications Proc IEEE Trans Industr Electron 48 2 2001 249 257
-
(2001)
Proc IEEE Trans Industr Electron
, vol.48
, Issue.2
, pp. 249-257
-
-
Werner, M.R.1
Fahrner, W.R.2
-
14
-
-
84866730677
-
-
COMSOL multiphysics library of materials properties
-
COMSOL multiphysics library of materials properties.
-
-
-
-
15
-
-
11244292142
-
Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments
-
J. Hornberger, A.B. Lostetter, K.I. Olejniczak, T. McNutt, S.M. Lal, and A. Mantooth Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments Proc IEEE Aerospace Conf 4 2004 2538 2555
-
(2004)
Proc IEEE Aerospace Conf
, vol.4
, pp. 2538-2555
-
-
Hornberger, J.1
Lostetter, A.B.2
Olejniczak, K.I.3
McNutt, T.4
Lal, S.M.5
Mantooth, A.6
-
17
-
-
63149135055
-
Design consideration of high temperature SiC power modules
-
IECON
-
Grummel B, McClure R, Zhou L, Gordon AP, Chow L, Shen ZJ. Design consideration of high temperature SiC power modules. In: Proceedings of the IEEE industrial electronics conference. IECON; 2008. p. 2861-66.
-
(2008)
Proceedings of the IEEE Industrial Electronics Conference
, pp. 2861-2866
-
-
Grummel, B.1
McClure, R.2
Zhou, L.3
Gordon, A.P.4
Chow, L.5
Shen, Z.J.6
-
18
-
-
84866736809
-
-
http://www.MatWeb.com.
-
-
-
-
19
-
-
79953736070
-
Mechanical characterization of an Au-Ge solder alloy for high temperature electronic devices
-
CIPS
-
Msolli S, Dalverny O, Alexis J, Karama M. Mechanical characterization of an Au-Ge solder alloy for high temperature electronic devices. In: Proceedings of the IEEE, integrated power electronics systems. CIPS; 2010. p. 1-5.
-
(2010)
Proceedings of the IEEE, Integrated Power Electronics Systems
, pp. 1-5
-
-
Msolli, S.1
Dalverny, O.2
Alexis, J.3
Karama, M.4
-
22
-
-
52349105406
-
Temperature levels effects on the thermo- mechanical behaviour of solder attach during thermal cycling of power electronic modules
-
PESC
-
Bouarroudj M, Khatir Z, Lefebvre S. Temperature levels effects on the thermo- mechanical behaviour of solder attach during thermal cycling of power electronic modules. In: Proceedings of the IEEE power electronics specialists conference. PESC; 2008. p. 2435-40.
-
(2008)
Proceedings of the IEEE Power Electronics Specialists Conference
, pp. 2435-2440
-
-
Bouarroudj, M.1
Khatir, Z.2
Lefebvre, S.3
-
23
-
-
3042728462
-
Board level solder reliability versus ramp rate and dwell time during temperature cycling
-
C.J. Zhai, Sidarth, and R. Blish Board level solder reliability versus ramp rate and dwell time during temperature cycling Proc IEEE Trans Device Mater Reliab 3 4 2003 207 212
-
(2003)
Proc IEEE Trans Device Mater Reliab
, vol.3
, Issue.4
, pp. 207-212
-
-
Zhai, C.J.1
Sidarth2
Blish, R.3
|