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Volumn 4, Issue , 2004, Pages 2538-2555

Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments

Author keywords

[No Author keywords available]

Indexed keywords

MOTOR DRIVES; SPACE EXPLORATION; SPACECRAFT POWER CONVERTER SYSTEMS; STATIC INDUCTION TRANSISTORS (SIT);

EID: 11244292142     PISSN: 1095323X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/AERO.2004.1368048     Document Type: Conference Paper
Times cited : (149)

References (21)
  • 1
    • 2342565397 scopus 로고    scopus 로고
    • A new high voltage schottky diode based on silicon-carbide (SiC)
    • Graz, Austria
    • Phlippen and Burger, "A New High Voltage Schottky Diode Based on Silicon-carbide (SiC)," 2001 EPE, Graz, Austria.
    • 2001 EPE
    • Phlippen1    Burger2
  • 3
    • 0037485106 scopus 로고    scopus 로고
    • Wide and narrow bandgap semiconductors for power electronics: A new valuation
    • Hudgins, "Wide and Narrow Bandgap Semiconductors for Power Electronics: A New Valuation", Journal of Electronic Materials, Vol. 32, No. 6, pp. 471-477, 2003.
    • (2003) Journal of Electronic Materials , vol.32 , Issue.6 , pp. 471-477
    • Hudgins1
  • 7
    • 0043160254 scopus 로고    scopus 로고
    • Silicon-carbide power MOSFET model and parameter extraction sequence
    • June 15-19. Acapulco, MEXICO
    • Ty McNutt, Allen Hefner, Alan Mantooth, David Berning, Sei-Hyung Ryu "Silicon-carbide Power MOSFET Model and Parameter Extraction Sequence" PESC03 June 15-19, 2003. Acapulco, MEXICO.
    • (2003) PESC03
    • McNutt, T.1    Hefner, A.2    Mantooth, A.3    Berning, D.4    Ryu, S.-H.5
  • 9
    • 0034502036 scopus 로고    scopus 로고
    • Siliconcarbide merged PiN schottky diode switching characteristics and evaluation for power supply applications
    • October
    • A. Hefner, D. Berning, J. Lai, C. Liu, R. Singh, "Siliconcarbide Merged PiN Schottky Diode Switching Characteristics and Evaluation for Power Supply Applications", Conference Recordings of IEEE IAS Annual Meeting, vol. 5, pp. 2948-2954, October 2000.
    • (2000) Conference Recordings of IEEE IAS Annual Meeting , vol.5 , pp. 2948-2954
    • Hefner, A.1    Berning, D.2    Lai, J.3    Liu, C.4    Singh, R.5
  • 12
    • 84884376976 scopus 로고    scopus 로고
    • Siliconcarbide power die packaging in diamond substrate multichip power module applications
    • Baltimore
    • Lostetter, Olejniczak, Brown, Elshabini, "Siliconcarbide Power Die Packaging in Diamond Substrate Multichip Power Module Applications", 2001 IMAPS Conference, Baltimore.
    • 2001 IMAPS Conference
    • Lostetter1    Olejniczak2    Brown3    Elshabini4
  • 15
    • 0033882843 scopus 로고    scopus 로고
    • An overview to integrated power module (IPM) design for power electronics packaging
    • September
    • Lostetter, Barlow, and Elshabini, "An Overview to Integrated Power Module (IPM) Design for Power Electronics Packaging", Journal of Microelectronics Reliability, pp 365-379, September 1999.
    • (1999) Journal of Microelectronics Reliability
    • Lostetter1    Barlow2    Elshabini3
  • 17
    • 0029267581 scopus 로고
    • Modeling buffer layer IGBT's for circuit simulation
    • March
    • A.R. Hefner, "Modeling Buffer Layer IGBT's for Circuit Simulation," IEEE Transactions on Power Electronics, vol. 10, no. 2, pp. 111-123, March 1995.
    • (1995) IEEE Transactions on Power Electronics , vol.10 , Issue.2 , pp. 111-123
    • Hefner, A.R.1
  • 20
    • 84860072056 scopus 로고    scopus 로고
    • NASA Venus fact sheet http://nssdc.gsfc.nasa.gov/planetary/factsheet/venusfact.htm
    • NASA Venus Fact Sheet
  • 21
    • 0343685892 scopus 로고    scopus 로고
    • Electronic packaging for power electronic building blocks
    • March
    • R. Hoagland, A.B. Lostetter, and Elshabini, "Electronic Packaging for Power Electronic Building Blocks," in the Proc. of GOMAC, pp.433-436, March 1997.
    • (1997) Proc. of GOMAC , pp. 433-436
    • Hoagland, R.1    Lostetter, A.B.2    Elshabini3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.