SCOPUS 정보 검색 플랫폼

Microelectronics Reliability

Volumn 52, Issue 9-10, 2012, Pages 2504-2507

Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics

(6) Lee, Seul Ki a Hong, Sung Il a Lee, Yeon Ho a Lee, Se Won b Cho, Won Ju b Park, Jong Tae a

a SolarLight Ltd (South Korea)

b Kwangwoon University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; ELECTRICAL INSTABILITY; ELECTRICAL PERFORMANCE; GATE-BIAS STRESS; LIGHT ILLUMINATION; NEGATIVE GATE; STRESS CONDITION; TEST DEVICE;

SILICON; THIN FILM TRANSISTORS;

GATE DIELECTRICS;

EID: 84866731406 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/j.microrel.2012.06.134 Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.