Comparison of 4.5-kV press-pack IGBTs and IGCTs for medium-voltage converters

IEEE Transactions on Industrial Electronics

Volumn 60, Issue 2, 2013, Pages 440-449

  Filsecker, Felipe ^a   Alvarez, Rodrigo ^a   Bernet, Steffen ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Insulated gate bipolar transistors (IGBTs); integrated gate commutated thyristors (IGCTs); power semiconductor devices; semiconductor losses; semiconductor measurements

Indexed keywords

CHIP SCALE PACKAGES; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PRESSES (MACHINE TOOLS); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

BLOCKING VOLTAGE; CLAMP CIRCUIT; DC-LINK VOLTAGES; INTEGRATED GATE-COMMUTATED THYRISTORS; JUNCTION TEMPERATURES; LABORATORY TEST; MEDIUM-VOLTAGE CONVERTER; POWER SEMICONDUCTOR DEVICES; QUANTITATIVE COMPARISON; SEMICONDUCTOR LOSS; SEMICONDUCTOR TECHNOLOGY; SWITCHING BEHAVIORS; SWITCHING MODES; SWITCHING TRANSIENT;

POWER QUALITY;

EID: 84866533016     PISSN: 02780046     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIE.2012.2187417     Document Type: Article

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