Design and technology of high-power silicon devices

Proceedings of the 18th International Conference - Mixed Design of Integrated Circuits and Systems, MIXDES 2011

Volumn , Issue , 2011, Pages 17-22

  Vobecký, Jan ^a,b  

^a ABB SWITZERLAND LTD   (Switzerland)

^b CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

diode; Power semiconductor devices; silicon; thyristor; transistor

Indexed keywords

BLOCKING VOLTAGE; CURRENT TRENDS; DESIGN AND TECHNOLOGY; HIGH-POWER; HIGH-POWER DEVICES; IC INDUSTRY; INTEGRATED GATE-COMMUTATED THYRISTORS; LARGE AREA DEVICES; LINE VOLTAGE; LOW-POWER DEVICES; OUTPUT CURRENT; PIN DIODE; POWER ELECTRONICS SYSTEMS; POWER SEMICONDUCTOR DEVICES; POWER SEMICONDUCTORS; SI TECHNOLOGY; SILICON DEVICES; SILICON-BASED DEVICES; TECHNICAL SOLUTIONS; VOLTAGE RATINGS;

BIPOLAR SEMICONDUCTOR DEVICES; DESIGN; DIODES; ELECTRIC SWITCHGEAR; EQUIPMENT; GALLIUM NITRIDE; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); INTEGRATED CIRCUITS; INTEGRATION; POWER ELECTRONICS; SEMICONDUCTOR DIODES; SILICON; SILICON CARBIDE; TECHNOLOGY; THYRISTORS; TRANSISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80053338822     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (26)

1. J. Vobecky, "Future Trends in High Power Devices," Proc. MIEL'2010, Nis, 2010, pp. 67-72.
2. :B. Koch, B. Husain, "Smart Electricity", ABB Review - Smart Grids, 2010, No.1, pp.6-9.
3. M. Rahimo, "Ultra High Voltage Semiconductor Power Devices for Grid Applications", Proc. IEDM2010, San Franscisco, pp.13.4.1-4.
4. H. Gruening, T. Tsuchiya, K. Satoh, Y. Yamaguchi, F. Mizohata, K. Takao, "6 kV 5 kA RCGCT with Advanced Gate Driver", Proc. ISPSD'01, Osaka, 2001, pp.133-136.
5. S. Tschirley, S. Bernet, P. Streit, "Design and Characteristic of Reverse Conducting 10-kV IGCT", Proc. of the PESC 2008, 2008, pp. 92-97.
6. M. Hiller, D. Krug, R. Sommer, S. Rohner, :A New Highly Modular Medium Voltage Converter Topology for Industrial Drive Applications", Proc. EPE 2009, Barcelona, 2009.
7. http://www.cree.com/press/
8. http://semisouth.com/default.htm
9. J. Milan, "Wide Band-Gap Power Semiconductor Devices", Proc. ISPS'06, Prague, pp. 2-6.
10. U. K. Mishra, "AlGaN/GaN Transistors for Power Electronics", Proceedings IEDM, San Francisco, 2010, pp.13.2.1-13.2.4.
11. http://www.abb.com/hvdc HVDC〉HVDC References 〉Asia〉 Xiangjiaba Shanghai
12. http://www.abb.com/hvdc HVDC〉HVDC References 〉Asia〉 North East - Agra
13. H. Iwamoto, K. Satoh, M. Yamamoto, A. Kawakami, "High-power semiconductor device: a symmetric gate commutated turn-off thyristor", IEE Proceedings Electr. Power Appl. Vol. 148, 2001, pp.363-368. (Pubitemid 32705134)
14. .H. Rüthing, F. Hille, F.-J. Niedernostheide, H.-J. Schulze, B. Brunner, "600 V Reverse Conducting (RC) IGBT for Drives Applications in Ultra-Thin Wafer Technology", Proc. ISPSD'2007, Jeju, pp. 89-92.
15. M. Rahimo, A. Kopta, U. Schlapbach, J. Vobecky, R. Schnell, S. Klaka, "The Bi-mode Insulated Gate Bipolar Transistor (BIGT): A Potential Technology for High-Power Devices", Proc. of the ISPSD'2009, Barcelona, pp. 283-286.
16. M. Rahimo, J. Vobecky, C. Corvasce, A. Kopta "1700 V Bi-Mode Insulated Gate Bipolar Transistor (BIGT) on Thin Wafer Technology", Proceedings ISPS'2010, Prague, pp.VCD02-1-4.
17. . J. Vobecky, V. Zahlava, K. Hemmann, M. Arnold, M. Rahimo "The Radiation Enhanced Diffusion (RED) Diode Realization of a Large Area p+p-n-n+ Structure with High SOA", Proc. ISPSD'2009, Barcelona, pp. 144-147.
18. P. Hazdra, J. Vobecky, H. Dorschner, K. Brand, "Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons", Microelectronics Journal 35, 2004, pp. 249-257.
19. L. Lutz, "Axial recombination centre technology for freewheeling diodes", Proc. EPE'97, Trondheim, 1997, pp. 1.502-1.506.
20. A. Kopta, M. Rahimo, Proc. of the17th ISPSD'2005, Santa Barbara, 2005, pp. 83-86.
21. J. Lutz, R. Baburske, M. Chen, B. Heinze, M. Domeij, H.-P. Felsl, H-J. Schulze, IEEE Trans. on Electron Devices, Vol. 56, 2009, pp. 2825-2832.
22. A. Porst., F. Auerbach, H. Brunner, G., Deboy, F. Hille, "Improvement of the Diode Characteristics Using Emitter-Conrtrolled Principles (EMCON Diode)", Proc. ISPSD'1997, Weimar, 1997, pp.213-216.
23. S. Matthias, J. Vobecky, C. Corvasce, A. Kopta "Field Shielded Anode (FSA) Concept Enabling Higher Temperature Operation of Fast Recovery Diodes", Proc. ISPSD2011, San Diego, accepted.
24. http://www.infineon.com/cms/en/product/
25. + IGCTs", Proc. PCIM 2011, Nuremberg, accepted for publication.
26. J. Vobecky, R. Siegrist, M. Arnold, K. Tugan, "Large Area Fast Recovery Diode with Very High SOA Capability for IGCT Applications", Proc. PCIM 2011, Nuremberg, accepted for publication.