600V LPT-CSTBT™ on advanced thin wafer technology

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 68-71

  Haraguchi, Yuki ^a   Honda, Shigeto ^a   Nakata, Kazunari ^a   Narazaki, Atsushi ^a   Terasaki, Yoshiaki ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUILT-IN POTENTIAL; DEVICE CHARACTERISTICS; ELECTRICAL CHARACTERISTIC; LIGHT PUNCH-THROUGH; LOW CURRENT DENSITY; MECHANICAL STRESS; PUNCH-THROUGH; THIN WAFERS;

STRESSES;

BIPOLAR TRANSISTORS;

EID: 84864748308     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890792     Document Type: Conference Paper

References (5)

1. H.Takahashi, H.Harugichi, H.Hagino and T.Yamada, "Carrier Stored Trench-Gate Bipolar Transistor (CSTBT)-A Novel Power Device for High Voltage Application-"ISPSD'96, p349-352(1996)
2. K. Nakamura, S. Kusunoki, H. Nakamura, Y. Ishimura, Y. Tomomatsu and T. Minato, "Advanced Wide Cell Pitch CSTBTs Having Light Punch-Through (LPT) Structures", Proc. ISPSD'02, pp.285-288, 2002
3. T. Matsudai, H. Nozaki, S. Umekawa, M. Tanaka, M Kobayashi, H. Hattori and A. Nakagawa, "Advanced 60p.m Thin 600V Punch-Through IGBT Concept for Extremely Low Forward Voltage and Low Turn-off Loss" Proc. ISPSD'01, pp.441-444, Jun. 2001
4. T. Laska, M. Münzer, F. Pirsch, C. Schaeffer, T. Schmidt, "The Field Stop IGBT (FS IGBT) A new device concept with a great improvement Potential", Proc. ISPSD'06, pp.355-358, Jun. 2006
5. H. Tanaka, K. Hotta, S. Kuwano, M Usui, M. Ishiko, "Mechanical stress dependence of power device electrical characteristics" Proc. ISPSD'06, pp.1-4, Jun. 2006