The corrugated p-base IGCT - A new benchmark for large area SOA scaling

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2007, Pages 29-32

  Wikström, Tobias ^a   Stiasny, Thomas ^a   Rahimo, Munaf ^a   Cottet, Didier ^a   Streit, Peter ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; GATE DIELECTRICS; NETWORKS (CIRCUITS); SAFETY FACTOR;

GATE CIRCUITS; SAFE OPERATING AREA (SOA); SOA SCALING;

TRANSISTORS;

EID: 39749157672     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294924     Document Type: Conference Paper

References (6)

1. Linder, Stefan: Power Semiconductors. EPFL Press / CRC Press, 2006. ISBN 2-940222-09-6 (EPFL Press) oder 0-8247-2569-7 (CRC Press)
2. H. Iwamoto, K. Satoh, M. Yamamoto and A. Kawakami, ''High-power semiconductor device: a symmetric gate commutatcd turn-off thyristor" in IEE Proc.-Electr. Power Appl. Vol 148. No4, July 2001
3. T. Stiasny and P. Streit, "A new combined local and lateral design technique for increased SOA of large area IGCTs" in Proc. ISPSD 2005. Santa-Barbara, USA
4. M. Hatle and J. Vobecky "Advanced methods for diagnostics of the GTO thyristor" in Microelectronics Journal, 24 (1993), p 147-155
5. M. Kamon, M.J. Tsuk, J. While, "Fasthenry, a multiple-accelerated 3D inductance extraction program," in IEEE Transactions on Microwave Theory and Techniques. 42(9): 1750-1758. September 1994.
6. M. Rahimo, A. Kopta, S. Ficher, U. Schlaphach, S. Linder, "Switching-Self-Clamping-Mode "SSCM"'', a breakthrough in SOA performance for high voltage IGBTs and Diodes" in Proc. ISPSD 2004, Kitakyushu, Japan