Electromechanical evaluation of a bondless pressure contact IGBT

IEE Proceedings: Circuits, Devices and Systems

Volumn 148, Issue 2, 2001, Pages 89-93

  Wakeman, F J ^a   Lockwood, G W ^a  

^a Littelfuse Ireland Ltd   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT SINKS; MICROPROCESSOR CHIPS; SEMICONDUCTOR DIODES; SUBSTRATES; THERMAL CYCLING; THERMODYNAMIC PROPERTIES; THYRISTORS;

POWER SEMICONDUCTOR SWITCHES;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0035302755     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20010295     Document Type: Article

References (15)

1. Reliability of high power IGBT modules testing on thermal fatigue effects due to traction cycles
2. Reliability testing and analysis of IGBT power semiconductor modules
3. Thermal stress related packaging failure in power IGBT modules
4. Investigation on the long term reliability of power IGBT modules
5. Pressure contact assembley technology of high power devices
6. Reliability of 400 A IGBT modules for traction convereters contribution on the power thermal fatigue influence on life expectancy
7. Multichip high power IGBT modules for traction and industrial applications
8. Investigation on fuses against case explosion
9. Electromechanical characteristics of a bondless pressure contact IGBT
10. New high reliability bondless pressure contact IGBT's
11. Pressure contact IGBTs
12. Design concepts of a bondless pressure contact IGBT
13. Pressure contact IGBT, the ideal switch for high power applications