The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 283-286

  Rahimo, M ^a   Kopta, A ^a   Schlapbach, U ^a   Vobecky, J ^a   Schnell, R ^a   Klaka, S ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN CONCEPT; FREEWHEELING DIODES; INSULATED GATE; NEW TECHNOLOGIES; OPERATIONAL MODES; POTENTIAL TECHNOLOGIES; POWER APPLICATIONS; SINGLE CHIPS; SWITCHING CONDITIONS;

ACTIVE FILTERS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

TRANSISTORS;

EID: 77949921534     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5158057     Document Type: Conference Paper

References (7)

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3. S. Voss, FJ Niedernostheide, HJ. Schulze; "Anode Design Variations in 1200V Trench Field-Stop RC- IGBTs" Proc. ISPSD'08, p 169.
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7. K. Satoh et al.; "A Newly Structured High Voltage Diode Highlighting Oscillation Free Function in Reverse Recovery" Proc. ISPSD'00, p 249.