How to select the system voltage of MV drives - A comparison of semiconductor expenses

IEEE Transactions on Industrial Electronics

Volumn 55, Issue 9, 2008, Pages 3381-3390

  Sayago, José A ^a,b   Brückner, Thomas ^c   Bernet, Steffen ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b Solon AG für Solartechnik   (Germany)

^c GENERAL ELECTRIC COMPANY   (United States)

Author keywords

Insulated gate bipolar transistor (IGBT) converters; Medium voltage (MV) converters

Indexed keywords

COMPUTER NETWORKS; FIBER LASERS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS;

INSULATED GATE BIPOLAR TRANSISTOR (IGBT) CONVERTERS; MEDIUM-VOLTAGE (MV) CONVERTERS; VOLTAGE LEVELS;

SEMICONDUCTOR DEVICES;

EID: 51449104505     PISSN: 02780046     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIE.2008.924032     Document Type: Article

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