Characterization of crystallographic defects in homoepitaxial diamond films by synchrotron X-ray topography and cathodoluminescence

Diamond and Related Materials

Volumn 20, Issue 4, 2011, Pages 523-526

  Umezawa, Hitoshi ^a   Kato, Yukako ^a   Watanabe, Hideyuki ^a   Omer, Ashraf M M ^a   Yamaguchi, Hirotaka ^a   Shikata, Shin Ichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Cathodoluminescence; Diamond; Mixed dislocations; Synchrotron radiation X ray topography

Indexed keywords

A-SPOTS; CRYSTALLOGRAPHIC DEFECTS; DIFFRACTION VECTORS; DISLOCATION LINES; HIGH TEMPERATURE; HOMOEPITAXIAL DIAMOND FILMS; MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; MIXED DISLOCATION; MIXED DISLOCATIONS; P-TYPE; SYNCHROTRON RADIATION X-RAY DIFFRACTIONS; SYNCHROTRON X RAYS;

BURGERS VECTOR; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; DEFECTS; DIAMOND FILMS; DIAMONDS; DIFFRACTION; HIGH PRESSURE EFFECTS IN SOLIDS; PLASMA DEPOSITION; SYNCHROTRON RADIATION; SYNCHROTRONS; SYNTHETIC DIAMONDS; VECTORS; X RAY DIFFRACTION; X RAYS;

TOPOGRAPHY;

EID: 79952607659     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2011.02.007     Document Type: Article

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