Control of surface and bulk crystalline quality in single crystal diamond grown by chemical vapour deposition

Diamond and Related Materials

Volumn 18, Issue 5-8, 2009, Pages 808-815

  Friel, I ^a   Clewes, S L ^a   Dhillon, H K ^a   Perkins, N ^a   Twitchen, D J ^a   Scarsbrook, G A ^a  

^a ELEMENT SIX LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CRYSTALLINE; CHEMICAL VAPOUR DEPOSITION; DEPOLARISATION; DISC LASER; DISLOCATION DENSITIES; DISLOCATION PROPAGATION; EXTENDED DEFECT; GROWTH DIRECTIONS; HEAT SPREADERS; HIGH QUALITY; HIGH QUALITY SINGLE CRYSTALS; IN-FIELD; INTRACAVITY; LOW BIREFRINGENCE; LOW DENSITY; MICROSCOPIC SCALE; NEW TECHNOLOGIES; PLANARITY; QUANTUM COMPUTING; SINGLE CRYSTAL CVD DIAMOND; SINGLE CRYSTAL DIAMOND; SUB-SURFACE DAMAGE; SURFACE DAMAGES;

BIREFRINGENCE; CRYSTALLINE MATERIALS; DIAMONDS; DISLOCATIONS (CRYSTALS); INDUCTIVELY COUPLED PLASMA; QUANTUM COMPUTERS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SINGLE CRYSTAL SURFACES; SOLID STATE LASERS; SUBSTRATES; SURFACE DEFECTS;

CHEMICAL VAPOR DEPOSITION;

EID: 67349247039     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.01.013     Document Type: Article

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