SCOPUS 정보 검색 플랫폼

Volumn 323, Issue 1, 2011, Pages 35-38

AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate

(5) Tokranov, V a Nagaiah, P a Yakimov, M a Matyi, R J a Oktyabrsky, S a

a STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

Molecular beam epitaxy; Nanostructures; Photoluminescence; Quantum wells; Semiconducting AlGaAsSb quaternary alloys; Superlattices

Indexed keywords

ALGAASSB; AVERAGE COMPOSITION; BIAXIAL STRAINS; GAAS SUBSTRATES; QUANTUM WELL; QUANTUM WELLS; ROOM-TEMPERATURE PHOTOLUMINESCENCE;

ALUMINUM; DEFECT DENSITY; GALLIUM ARSENIDE; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SUPERLATTICES;

GALLIUM ALLOYS;

EID: 79957973879 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.12.077 Document Type: Article

Times cited : (21)

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