Study of strain fields caused by crystallization of boron doped amorphous silicon using scanning transmission electron microscopy convergent beam electron diffraction method

Journal of Applied Physics

Volumn 112, Issue 4, 2012, Pages

  Nakanishi, Nobuto ^a   Arie, Hiroyuki ^a   Kunimune, Yorinobu ^a   Ide, Takashi ^a   Hirose, Yukinori ^a   Hattori, Nobuyoshi ^a   Koyama, Toru ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; BORON CONCENTRATIONS; BORON SEGREGATION; BORON-DOPED; BORON-DOPED SILICON; CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); DIFFRACTION ANALYSIS; PRODUCTION YIELD; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SILICON DEVICES; STRAIN DISTRIBUTIONS; STRAIN FIELDS; VOLUME SHRINKAGE;

ELECTRODES; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; FACTOR ANALYSIS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 84865857879     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4747838     Document Type: Article

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