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Volumn 49, Issue 4 PART 2, 2010, Pages

Three-dimensional visualization technique for crystal defects in high performance p-channel metal-oxide-semiconductor field-effect transistors with embedded SiGe SOURCE/DRAIN

(12) Kudo, Shuichi a Nakanishi, Nobuto a Hirose, Yukinori a Sato, Kazuhiko a Yamashita, Tomohiro a Oda, Hidekazu a Kashihara, Keiichiro a Murata, Naofumi a Katayama, Toshiharu a Asayama, Kyoichiro a Komori, Junko a Murakami, Eiichi a

a RENESAS TECHNOLOGY CORP (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DARK FIELD; DEVICE ARCHITECTURES; ELECTRON TOMOGRAPHY; EMBEDDED SIGE SOURCE/DRAIN; GEOMETRIC RELATIONSHIPS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; P-MOSFETS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; STRAINED SILICON; THREE DIMENSIONAL VISUALIZATION;

DIELECTRIC DEVICES; ELECTRIC IMPEDANCE TOMOGRAPHY; FIELD EFFECT TRANSISTORS; ION BEAMS; MOSFET DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON ALLOYS; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY; VISUALIZATION;

CRYSTAL DEFECTS;

EID: 77952725385 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.04DA22 Document Type: Article

Times cited : (7)

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