Microstructures formed in recrystallized Si

Applied Physics Letters

Volumn 84, Issue 22, 2004, Pages 4520-4522

  Watanabe, K ^a   Anzai, Y ^b   Nakanishi, N ^b   Yamazaki, T ^b   Kuramochi, K ^b   Mitsuishi, K ^c   Furuya, K ^c   Hashimoto, I ^b  

^a TOKYO METROPOLITAN COLLEGE OF INDUSTRIAL TECHNOLOGY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH FROM MELT; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DIFFRACTION; ENERGY DISPERSIVE SPECTROSCOPY; HIGH RESOLUTION ELECTRON MICROSCOPY; PROJECTION SYSTEMS; RECRYSTALLIZATION (METALLURGY); STACKING FAULTS; THIN FILMS;

ATOMIC COLUMNS; DIFFRACTION PATTERNS; MICROTWINS; SELECTED AREA DIFFRACTION (SAD);

SILICON WAFERS;

EID: 3042698617     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1758293     Document Type: Article

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