Novel shallow trench isolation process from viewpoint of total strain process design for 45 nm node devices and beyond

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2152-2156

  Ishibashi, Masato ^a   Horita, Katsuyuki ^a   Sawada, Mahito ^a   Kitazawa, Masashi ^a   Igarashi, Motoshige ^a   Kuroi, Takashi ^a   Eimori, Takahisa ^a   Kobayashi, Kiyoteru ^a   Inuishi, Masahide ^a   Ohji, Yuzuru ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Fluorine doped hdp cvd; Junction leakage current; Mobility; Shallow trench isolation; Stress

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; ELECTRON DIFFRACTION; ELECTRON MOBILITY; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDATION; SEMICONDUCTOR JUNCTIONS; SILICA; STRAIN;

FLUORINE-DOPED HDP-CVD; JUNCTION LEAKAGE CURRENTS; MOBILITY; SHALLOW TRENCH ISOLATION; STRESS;

FLUORINE;

EID: 21244505803     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2152     Document Type: Conference Paper

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