Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors

Applied Physics Letters

Volumn 101, Issue 9, 2012, Pages

  Yan, Hongping ^a   Schuettfort, Torben ^b   Kronemeijer, Auke J ^b   McNeill, Christopher R ^c   Ade, Harald W ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c MONASH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; INTERFACE STRUCTURES; INTERFACIAL WIDTH; PHYSICAL INTERFACE; POLYMER DIELECTRICS; SOFT-X-RAY REFLECTIVITY; SOLUTION-PROCESSED;

DIELECTRIC DEVICES; ORGANIC FIELD EFFECT TRANSISTORS;

DIELECTRIC MATERIALS;

EID: 84865852752     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4748976     Document Type: Article

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