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Applied Physics Letters

Volumn 100, Issue 3, 2012, Pages

The influence of gate dielectrics on a high-mobility n-type conjugated polymer in organic thin-film transistors

(5) Li, Jinhua a Du, Jun b Xu, Jianbin b Chan, Helen L W a Yan, Feng a

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

b CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH MOBILITY; IONIC POLARIZATION; MOLECULAR PACKINGS; N-TYPE SEMICONDUCTORS; ORGANIC THIN FILM TRANSISTORS; POLARON EFFECTS; POLYMER GATE DIELECTRICS; SHORT DISTANCES;

CONJUGATED POLYMERS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; ELECTRONS; NAPHTHALENE; THIN FILM TRANSISTORS; TRANSISTORS;

GATE DIELECTRICS;

EID: 84863069736 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3678196 Document Type: Article

Times cited : (47)

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