Epitaxy of orthorhombic BaSi 2 with preferential in-plane crystal orientation on Si(001): Effects of vicinal substrate and annealing temperature

Japanese Journal of Applied Physics

Volumn 51, Issue 9, 2012, Pages

  Toh, Katsuaki ^a   Hara, Kosuke O ^b   Usami, Noritaka ^b,c   Saito, Noriyuki ^d   Yoshizawa, Noriko ^d   Toko, Kaoru ^a   Suemasu, Takashi ^a,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CRYSTALLOGRAPHIC ORIENTATIONS; GRAIN SIZE; MISCUT ANGLE; REACTIVE DEPOSITION EPITAXY; SI (001) SUBSTRATE; SI SUBSTRATES; SI(0 0 1); SUBSTRATE ANNEALING; VICINAL SUBSTRATES;

ANNEALING; EPITAXIAL FILMS; EPITAXIAL GROWTH; GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATES;

EID: 84865837458     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.095501     Document Type: Article

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