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Journal of Luminescence

Volumn 132, Issue 12, 2012, Pages 3113-3117

Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE

(4) Wakahara, Akihiro a Sekiguchi, Hiroto a Okada, Hiroshi a Takagi, Yasufumi b

a TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

b CENTRAL RESEARCH LABORATORY (Japan)

Author keywords

Eu doped GaN; LED; MBE; Mg co doping

Indexed keywords

ACTIVE LAYER; BAND-GAP EXCITATION; CO-DOPED; CO-DOPING; CURRENT STATUS; EU-DOPED GAN; LUMINESCENCE INTENSITY; RECENT PROGRESS;

CRYSTAL GROWTH; EUROPIUM; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY;

LIGHT EMITTING DIODES;

EID: 84865679260 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2012.02.001 Document Type: Conference Paper

Times cited : (30)

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