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Applied Physics Letters

Volumn 73, Issue 12, 1998, Pages 1700-1702

Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy

(2) Steckl, A J a Birkhahn, R a

a University of Cincinnati (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001411537 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.122250 Document Type: Article

Times cited : (247)

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