Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Woodward, N ^a   Poplawsky, J ^a   Mitchell, B ^a   Nishikawa, A ^b   Fujiwara, Y ^b   Dierolf, V ^a  

^a LEHIGH UNIVERSITY   (United States)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP EXCITATION; DEFECT CENTERS; DEVICE EFFICIENCY; DIRECT EXCITATION; EXCITATION EFFICIENCY; EXCITATION INTENSITY; EXCITATION MECHANISMS; IN-SITU; LOW ENERGY TRANSFERS; ORGANOMETALLIC VAPOR PHASE EPITAXY; RED EMISSIONS; RELATIVE ABUNDANCE; VISIBLE SPECTRAL REGIONS;

ENERGY TRANSFER; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; ORGANOMETALLICS;

EUROPIUM;

EID: 78651326767     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3533806     Document Type: Article

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