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Optical Materials

Volumn 33, Issue 7, 2011, Pages 1063-1065

The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN

(6) O'Donnell, K P a Roqan, I S a,d Wang, Ke a,e Lorenz, K b Alves, E b Bockowski M c

a UNIVERSITY OF STRATHCLYDE (United Kingdom)

b INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

c INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

d KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Saudi Arabia)

e RITSUMEIKAN UNIVERSITY (Japan)

Author keywords

Europium; Excitation mechanism; Gallium nitride; Ion implantation; Photoluminescence

Indexed keywords

BINARY ALLOYS; EMISSION SPECTROSCOPY; EUROPIUM; EXCITED STATES; III-V SEMICONDUCTORS; ION IMPLANTATION; PHOTOLUMINESCENCE;

COMPLEX EMISSIONS; EXCITATION MECHANISMS; EXCITATION SPECTRUM; IMPLANTATION PROCESS; LUMINESCENT CENTRES; OPTICALLY ACTIVE DEFECTS; PHOTO-LUMINESCENCE EXCITATION; STRUCTURAL DETERMINATION;

GALLIUM NITRIDE;

EID: 79955528329 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/j.optmat.2010.07.002 Document Type: Conference Paper

Times cited : (36)

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