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Applied Physics B: Lasers and Optics

Volumn 97, Issue 3, 2009, Pages 607-618

Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy

(6) Fleischman, Z a Munasinghe, C b Steckl, A J b Wakahara, A c Zavada, J d Dierolf, V a

a LEHIGH UNIVERSITY (United States)

b University of Cincinnati (United States)

c TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

d U S ARMY RESEARCH OFFICE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLOSE-IN; COMBINED EXCITATION-EMISSION SPECTROSCOPY; COMPARATIVE STUDIES; DEEP DEFECTS; DEEP TRAPS; ELECTRON HOLE PAIRS; ELECTRON PHONON; EMISSION INTENSITY; EUROPIUM IONS; EXCITATION CONDITIONS; EXCITATION PATHWAYS; IN-SITU; ION IMPLANTED; ORGANOMETALLIC VAPOR PHASE EPITAXY; RESONANT EXCITATION; SHALLOW DEFECTS; SITE SELECTIVE; SITE SELECTIVE SPECTROSCOPY;

CRYSTAL GROWTH; DOPING (ADDITIVES); EMISSION SPECTROSCOPY; EUROPIUM; EXCITONS; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ORGANOMETALLICS; PHONONS; SEMICONDUCTING GALLIUM;

IONS;

EID: 70350568189 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-009-3605-x Document Type: Article

Times cited : (62)

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