Strength analysis of EUV-exposed photo resists by AFM at 40 nm half pitch and below

Microelectronic Engineering

Volumn 98, Issue , 2012, Pages 159-162

  Winroth, Gustaf ^a   Gronheid, Roel ^a   Kim, Tae Gon ^a   Mertens, Paul W ^a  

^a IMEC   (Belgium)

Author keywords

AFM; EUV lithography; Pattern collapse; Photo resists; Yield stress

Indexed keywords

AFM; EXTREME ULTRAVIOLETS; FEATURE SIZES; HIGH RESOLUTION; INTRINSIC STRENGTH; PATTERN COLLAPSE; RESIST DEVELOPMENT; SCANNING PROBES; STRENGTH ANALYSIS; STRENGTH COEFFICIENTS;

EXTREME ULTRAVIOLET LITHOGRAPHY; YIELD STRESS;

PHOTORESISTS;

EID: 84865587495     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.07.056     Document Type: Conference Paper

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