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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 6, 2010, Pages

Comparison of positive tone versus negative tone resist pattern collapse behavior

(5) Yeh, Wei Ming a Noga, David E a Lawson, Richard A a Tolbert, Laren M b Henderson, Clifford L a

a Georgia Institute of Technology (United States)

b GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; FILM PREPARATION;

CAPILLARY FORCE; COLLAPSE BEHAVIOR; CRITICAL STRESS; DEPROTECTION; DEVELOPMENT PROCESS; DRYING STEP; E-BEAM LITHOGRAPHY; HYDROXYSTYRENE; IMAGING MECHANISM; MAXIMUM STRESS; MODULAR APPROACH; NEGATIVE TONE RESIST; NEGATIVE TONES; PARALLEL LINE; PATTERN COLLAPSE; PATTERN LAYOUT; POSITIVE TONE; POSITIVE-TONE RESISTS; SPACE BETWEEN; SUBSTRATE PREPARATION;

PHOTORESISTS;

EID: 78650085373 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3518136 Document Type: Article

Times cited : (36)

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