Understanding pattern collapse in high-resolution lithography: Impact of feature width on critical stress

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Noga, David E ^a   Lawson, Richard A ^a   Lee, Cheng Tsung ^a   Tolbert, Laren M ^b   Henderson, Clifford L ^a  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Adhesion failure; Critical stress; Pattern collapse

Indexed keywords

ADHESION FAILURE; ADHESION FORCES; CAPILLARY FORCE; CHEMICALLY AMPLIFIED RESIST; CRITICAL STRESS; FEATURE SIZES; HIGH RESOLUTION; HYDROXYSTYRENE; LINEWIDTH ROUGHNESS; MECHANICAL STRENGTH; MODERN MICROELECTRONICS; NEGATIVE IMPACTS; PATTERN COLLAPSE; PATTERN SPACE; RADII OF CURVATURE; RESIST FILMS; RESIST MATERIALS; RESIST PATTERN; RESIST RESOLUTION; SIDE WALLS; SIDEWALL ANGLES; WET-PROCESSING;

ADHESION; CONTACT ANGLE; DEWATERING; LIQUIDS; PHOTORESISTORS; PHOTORESISTS; SURFACE TENSION;

DRYING;

EID: 65849267969     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.829142     Document Type: Conference Paper

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