32 nm pattern collapse modeling with radial distance and rinse speed

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 8 A, 2007, Pages 5101-5103

  Kim, Jong Sun ^a   Chang, Wook ^a   An, Ilsin ^a   Oh, Hye Keun ^a  

^a Hanyang University   (South Korea)

Author keywords

Critical aspect ratio; Pattern collapse; Radial distance; Rinse speed; Spinning wafer

Indexed keywords

ASPECT RATIO; CAPILLARITY; COMPUTER SIMULATION; MATERIALS SCIENCE; MATHEMATICAL MODELS;

CRITICAL ASPECT RATIO; PATTERN COLLAPSE; RADIAL DISTANCE; RINSE SPEED; SPINNING WAFER;

NANOSTRUCTURED MATERIALS;

EID: 34547880420     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5101     Document Type: Article

References (8)

1. T. Tanaka, M. Morigami, and N. Atoda: Jpn. J. Appl. Phys. 32 (1993) 6059.
2. M. Y. Kim: private communication.
3. G. K. Batchelor: An Introduction to Fluid Dynamics (Cambridge University Press, London, 1967).
4. J. H. Hwang and F. Ma: J. Appl. Phys. 66 (1989) 388.
5. A. W. Adamson and A. P. Gast: Physical Chemistry of Surfaces (John Wiley & Sons, New York, 1997) 6th ed.
6. W. C. Young: Roark's Formulas for Stress and Strain (McGraw-Hill, New York, 1989) 6th ed.
7. F. P. Beer and E. R. Johnston: Mechanics of Materials (McGraw-Hill, New York, 1981).
8. H. J. Lee, J. T. Park, J. Y. Yoo, I. An, and H. K. Oh: J. Korean Phys. Soc. 42 (2003) S202.