Temperature-dependent Kelvin probe measurements of band bending in p-type GaN

Applied Physics Letters

Volumn 101, Issue 8, 2012, Pages

  Foussekis, M ^a   McNamara, J D ^a   Baski, A A ^a   Reshchikov, M A ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; CALCULATED VALUES; HYDRIDE VAPOR PHASE EPITAXY; KELVIN PROBE MEASUREMENTS; MG-DOPING; P-TYPE GAN; SAMPLE TEMPERATURE; TEMPERATURE DEPENDENT;

PHYSICAL PROPERTIES; PHYSICS;

GALLIUM NITRIDE;

EID: 84865485412     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4747203     Document Type: Article

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