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Volumn 8262, Issue , 2012, Pages
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Temperature dependent behavior of the SPV for n-type GaN
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Author keywords
band bending; GaN; Kelvin probe; surface photovoltage
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Indexed keywords
BANDBENDING;
EFFECT OF TEMPERATURE;
GAN;
HIGHER TEMPERATURES;
HYDRIDE VAPOR PHASE EPITAXY;
INTENSITY-DEPENDENT;
KELVIN PROBE;
MODEL-BASED OPC;
NEAR-SURFACE;
SAMPLE TEMPERATURE;
SURFACE PHOTOVOLTAGES;
TEMPERATURE DEPENDENT;
TEMPERATURE DEPENDENT BEHAVIOR;
OXYGEN;
SURFACE PROPERTIES;
GALLIUM NITRIDE;
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EID: 84859602746
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.910289 Document Type: Conference Paper |
Times cited : (10)
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References (13)
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