Comparison of surface photovoltage behavior for n-type versus p-type GaN

Journal of Vacuum Science and Technology B

Volumn 29, Issue 4, 2011, Pages

  Foussekis, M ^a   Baski, A A ^a   Reshchikov, M A ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; SURFACE PROPERTIES;

HYDRIDE VAPOR PHASE EPITAXY; ILLUMINATION GEOMETRY; NEGATIVELY CHARGED; PHOTOGENERATED HOLES; PHOTOINDUCED PROCESS; SURFACE BAND BENDING; SURFACE PHOTOVOLTAGES; ULTRAVIOLET EXPOSURE;

GALLIUM NITRIDE;

EID: 80051890588     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3605299     Document Type: Article

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