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Volumn 798, Issue , 2003, Pages 793-798
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Band bending near the surface in GaN as detected by a charge sensitive probe
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ADSORBENTS;
ATOMIC FORCE MICROSCOPY;
DESORPTION;
ELECTRIC FIELDS;
LASERS;
OPTICAL DEVICES;
OXIDATION;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR DEVICES;
SILICON;
THERMAL EFFECTS;
ULTRAVIOLET RADIATION;
BAND BENDING;
NITROGEN LASER;
SURFACE BARRIER;
THERMIONIC TRANSFER;
GALLIUM NITRIDE;
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EID: 2942635554
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-798-y5.39 Document Type: Conference Paper |
Times cited : (14)
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References (15)
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