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Volumn 798, Issue , 2003, Pages 793-798

Band bending near the surface in GaN as detected by a charge sensitive probe

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBENTS; ATOMIC FORCE MICROSCOPY; DESORPTION; ELECTRIC FIELDS; LASERS; OPTICAL DEVICES; OXIDATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICES; SILICON; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

EID: 2942635554     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-798-y5.39     Document Type: Conference Paper
Times cited : (14)

References (15)
  • 12
    • 2942645895 scopus 로고    scopus 로고
    • note
    • In this experiment, one pulse created about 10 electron-hole pairs per square centimeter.
  • 14
    • 84862367220 scopus 로고    scopus 로고
    • S.-J. Cho, S. Dogan, S. Sabuktagin, M. A. Reshchikov, D. K. Johnstone, and H. Morkoç, unpublished
    • S.-J. Cho, S. Dogan, S. Sabuktagin, M. A. Reshchikov, D. K. Johnstone, and H. Morkoç, unpublished.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.