Ionization energy and electron affinity of clean and oxidized Al xGa1-xN(0001) surfaces

Materials Research Society Symposium Proceedings

Volumn 680, Issue , 2001, Pages 96-101

  Nienhaus, H ^a   Schneider, M ^a   Grabowski, S P ^a   Monch W ^a   Dimitrov, R ^b   Ambacher, O ^b   Stutzmann, M ^b  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON AFFINITY; IONIZATION POTENTIAL; LANGMUIR BLODGETT FILMS; MONOLAYERS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

ATOM FLUX; ION SPUTTERING; NEGATIVE ELECTRON AFFINITY; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 34249904120     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-680-e4.5     Document Type: Conference Paper

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