A 60GHz-band 20dBm power amplifier with 20% peak PAE

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2011, Pages

  Zhao, Yi ^a   Long, John R ^a   Spirito, Marco ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Millimeter wave; neutralization; power amplifier; power combining; SiGe BiCMOS; transformer

Indexed keywords

ACTIVE AREA; COMMON-BASE; COMPACT DIMENSIONS; DIFFERENTIAL PAIRS; DIFFERENTIAL POWER AMPLIFIER; LOW INSERTION LOSS; MAXIMUM OUTPUT POWER; NEUTRALIZATION; ON CHIPS; POWER COMBINING; REVERSE ISOLATION; SIGE-BICMOS; SMALL-SIGNAL GAIN; TRANSFORMER;

DIGITAL INTEGRATED CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; POWER AMPLIFIERS; RADIO; RADIO WAVES; SEMICONDUCTING SILICON; SILICON ALLOYS;

COUPLED CIRCUITS;

EID: 79960755563     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2011.5940687     Document Type: Conference Paper

References (7)

1. A. Hamidian, and G. Boeck, "60 GHz wide-band power amplifier," in Proc. of IEEE BCTM, 2009, pp. 47-50.
2. T.S.D Cheung, and J.R. Long, "A 21-26-GHz SiGe bipolar power amplifier MMIC," IEEE Journal of Solid-State Circuits, vol. 40, no. 12, 2005, pp. 2583-2597.
3. Y. Zhao, J.R. Long and M. Spirito, "Compact transformer power combiners for millimeter-wave wireless applications," in Proc. of IEEE RFIC, 2010, pp. 223-226.
4. max 0.13μm SiGe:C BiCMOS technology," in Proc. of IEEE BCTM, 2003, pp. 199-202.
5. R. Ben Yishay, R. Carmon, O. Katz, and D. Elad, "A high gain wideband 77GHz SiGe power amplifier," in Proc. of IEEE RFIC, 2010, pp. 529-532.
6. U.R. Pfeiffer, and D. Goren, "A 20 dBm fully-integrated 60 GHz SiGe power amplifier with automatic level control," IEEE Journal of Solid-State Circuits, vol. 42, no. 7, 2007, pp. 1455-1463.
7. B. Martineau, V. Knopik, A. Siligaris, F. Gianesello, and D. Belot, "A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS," in Proc. of IEEE ISSCC, 2010, pp.428-429.