Interface observation in Au/Ni/p-GaN studied by HREM and energy-filtering TEM

Journal of Electron Microscopy

Volumn 52, Issue 5, 2003, Pages 459-464

  Lim, Sung Hwan ^a   Ra, Tae Yeub ^b   Kim, Won Yong ^b  

^a Kangwon National University   (South Korea)

^b Korea Institute of Industrial Technology   (South Korea)

Author keywords

Energy filtering imaging; High resolution electron microscopy; Interface; Ohmic contacts

Indexed keywords

ANNEALING; CONTACT RESISTANCE; ELECTRIC CONTACTORS; GALLIUM NITRIDE; GOLD; HIGH RESOLUTION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; NICKEL; NICKEL OXIDE;

ANNEALING CONDITION; ENERGY FILTERING; ENERGY-FILTERING IMAGING; ENERGY-FILTERING TEM; PHASE DISTRIBUTION;

OHMIC CONTACTS;

EID: 0346973937     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/52.5.459     Document Type: Article

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