Formation and electronic properties of oxygen annealed Au/Ni and Pt/Ni contacts to p-type GaN

Semiconductor Science and Technology

Volumn 22, Issue 3, 2007, Pages 186-193

  Pettersen, S V ^a   Grande, A P ^a   Tybell, T ^a   Riechert, H ^b   Averbeck, R ^b   Grepstad, J K ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; ANNEALING; ELECTRIC LINES; ELECTRONIC PROPERTIES; GALLIUM NITRIDE; METALLIZING; THERMOOXIDATION; TRANSPORT PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE REACTION; ION SPUTTERING; THERMAL OXIDATION; THERMALLY ACTIVATED REACTION;

ELECTRIC CONTACTS;

EID: 34247267765     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/3/003     Document Type: Article

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