Monolithic growth of ultrathin Ge nanowires on Si(001)

Physical Review Letters

Volumn 109, Issue 8, 2012, Pages

  Zhang, J J ^a   Katsaros, G ^a,e   Montalenti, F ^b   Scopece, D ^b   Rezaev, R O ^a,f   Mickel, C ^d   Rellinghaus, B ^d   Miglio, L ^b   De Franceschi, S ^c   Rastelli, A ^a,e   Schmidt, O G ^a  

^a IFW DRESDEN   (Germany)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c UNIV GRENOBLE ALPES   (France)

^d Institute for Metallic Materials   (Germany)

^e JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^f NATIONAL RESEARCH TOMSK POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMICALLY FLAT SURFACE; CATALYST-FREE METHOD; CROSS SECTION; ELECTRICAL CONTACTS; EXOTIC PROPERTIES; HOLE SYSTEMS; LONGITUDINAL EXPANSIONS; QUANTITATIVE AGREEMENT; SELF-ASSEMBLED; SI(0 0 1); SILICON-BASED; SINGLE WIRES; THERMODYNAMIC MODEL; TRIANGULAR CROSS-SECTIONS; ULTRA-THIN; UNIT CELLS;

GERMANIUM; MOLECULAR BEAM EPITAXY; NANOWIRES; SILICON;

WIRE;

EID: 84865427780     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.109.085502     Document Type: Article

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