SCOPUS 정보 검색 플랫폼

Volumn 112, Issue 3, 2012, Pages

Ion irradiation of electronic-type-separated single wall carbon nanotubes: A model for radiation effects in nanostructured carbon

(10) Rossi, Jamie E a Cress, Cory D b Helenic, Alysha R a Schauerman, Chris M a Dileo, Roberta A a,c Cox, Nathanael D a,c Messenger, Scott R b Weaver, Brad D b Hubbard, Seth M a,c Landi, Brian J a

a ROCHESTER INSTITUTE OF TECHNOLOGY (United States)

b NAVAL RESEARCH LABORATORY (United States)

c Kate Gleason College of Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGE SOURCES; DEFECT CONCENTRATIONS; DISPLACEMENT DAMAGE DOSE; ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT PROPERTIES; ELECTRONIC DEVICE; FLUENCES; HARSH ENVIRONMENT; LOCALIZED DEFECTS; LOW ENERGIES; NANOSTRUCTURED CARBON MATERIALS; NANOSTRUCTURED CARBONS; PEAK INTENSITY; RADIATION RESPONSE; RADIATION-INDUCED; SENSITIVE INDICATOR; STRUCTURAL AND ELECTRICAL PROPERTIES; STRUCTURAL MODIFICATIONS;

ACCIDENTS; CARBON NANOTUBES; DEFECTS; ELECTRIC PROPERTIES; GRAPHENE; IONS; IRRADIATION; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SEPARATION; TRANSPORT PROPERTIES;

RADIATION;

EID: 84865256983 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4739713 Document Type: Article

Times cited : (19)

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