Electrical conduction mechanism in nanocrystalline CdTe (nc-CdTe) thin films

Applied Physics A: Materials Science and Processing

Volumn 108, Issue 4, 2012, Pages 911-920

  Sharma, Kriti ^a   Al Kabbi, Alaa S ^a   Saini, G S S ^a   Tripathi, S K ^a  

^a PANJAB UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CDTE; CDTE NANOCRYSTALS; CONDUCTION MECHANISM; DARK CONDUCTIVITY; DC CONDUCTIVITY; DC CONDUCTIVITY MEASUREMENTS; DECAY PROCESS; DEGREE OF DISORDER; ELECTRICAL CHARACTERIZATION; ELECTRICAL CONDUCTION MECHANISMS; GLASS SUBSTRATES; HALL MEASUREMENTS; HIGH TEMPERATURE CONDUCTIVITY; HOPPING DISTANCES; HOPPING ENERGIES; INERT GAS CONDENSATION; LOCALIZED STATE; LOW TEMPERATURE REGIONS; LOW TEMPERATURES; NANOCRYSTALLINES; TEMPERATURE RANGE; TRANSIENT PHOTOCONDUCTIVITY; TRANSMISSION ELECTRON MICROSCOPY TEM; VARIABLE-RANGE HOPPING; VERY LOW TEMPERATURES;

ACTIVATION ENERGY; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY MEASUREMENT; FERMI LEVEL; HALL MOBILITY; INERT GASES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THERMIONIC EMISSION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CADMIUM TELLURIDE;

EID: 84865238182     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-012-6993-4     Document Type: Article

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