SIMS depth profiling analysis of halogens in CdTe/CdS/TSO solar cells using Cs 2 M + cluster ions

Applied Surface Science

Volumn 255, Issue 4, 2008, Pages 1423-1426

  Koudriavtseva, O ^a   Morales Acevedo, A ^a   Kudriavtsev, Yu ^a   Gallardo, S ^a   Asomoza, R ^a   Mendoza Perez, R ^b   Sastre Hernandez, J ^b   Contreras Puente, G ^b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

Author keywords

Halogens; SIMS; Solar cells

Indexed keywords

CADMIUM TELLURIDE; DEPTH PROFILING; II-VI SEMICONDUCTORS; IONS; METAL ANALYSIS; METALS; SECONDARY ION MASS SPECTROMETRY;

CLUSTER IONS; CONCENTRATION RANGES; DEPTH-PROFILING ANALYSIS; HALOGENS; HIGH YIELD; ION YIELDS; SIMS ANALYSIS; SOLAR CELL STRUCTURES;

SOLAR CELLS;

EID: 56449122965     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.06.201     Document Type: Article

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