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Journal of Physics and Chemistry of Solids

Volumn 63, Issue 1, 2001, Pages 163-170

Effect of annealing temperature on the optical and electrical properties of amorphous As45.2Te46.6In8.2 thin films

(2) Abu Sehly, A A a Abd Elrahman, M I a

a Assiut University (Egypt)

Author keywords

A. Chalcogenides; A. Glasses; A. Semiconductors; D. Electrical properties; D. Optical properties

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; ANNEALING; ARSENIC COMPOUNDS; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; LIGHT ABSORPTION; PERMITTIVITY; X RAY DIFFRACTION ANALYSIS;

CHALCOGENIDES;

THIN FILMS;

EID: 0036027847 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3697(01)00123-8 Document Type: Article

Times cited : (17)

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