Oxygen vacancy effects on the Schottky barrier height at the Au/TiO2(110) interface: A first principle study

Solid State Communications

Volumn 147, Issue 5-6, 2008, Pages 205-207

  Marri, Ivan ^a   Ossicini, Stefano ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

A. Semiconductors; A. Surfaces and interfaces

Indexed keywords

ELECTRONIC PROPERTIES; OXYGEN; OXYGEN VACANCIES; SCHOTTKY BARRIER DIODES;

(PL) PROPERTIES; MULTILAYER (ML); PHOTOVOLTAIC DEVICES; SCHOTTKY-BARRIER HEIGHT (SBH); VACANCY EFFECTS;

STRUCTURAL PROPERTIES;

EID: 46049085790     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.05.018     Document Type: Article

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