Er 3+ Doping conditions of planar porous silicon waveguides

Applied Surface Science

Volumn 256, Issue 3, 2009, Pages 581-586

  Najar, A ^a,b   Lorrain, N ^a   Ajlani, H ^b   Charrier, J ^a   Oueslati, M ^b   Haji, L ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

^b FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

Author keywords

EDX; Er doping; IR photoluminescence; Porous silicon; Waveguides

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; ENERGY TRANSFER; OPTICAL WAVEGUIDES; OXIDATION; PHOTOLUMINESCENCE; POROUS SILICON; SILICON COMPOUNDS; WAVEGUIDES;

COMPLEX FORMATIONS; DIFFUSION TEMPERATURE; ELECTROCHEMICAL METHODS; ER-DOPING; INFRARED PHOTOLUMINESCENCE; OPTICAL ACTIVATION; OPTIMAL DISTRIBUTIONS; SILICON WAVEGUIDE;

ERBIUM COMPOUNDS;

EID: 71749107722     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.08.030     Document Type: Review

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