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Journal of Materials Science: Materials in Electronics

Volumn 23, Issue 9, 2012, Pages 1750-1758

Structural and electrical properties of V-doped Zno prepared by the solid state reaction

(2) Çolak, Hakan a Türkoğlu, Orhan b

a CANKIRI KARATEKIN UNIVERSITY (Turkey)

b ERCIYES UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC TEMPERATURE; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; II-VI SEMICONDUCTORS; SOLID STATE REACTIONS; SOLUBILITY; SYSTEMS (METALLURGICAL); X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

AIR ATMOSPHERE; BINARY SYSTEMS; DOPED ZINC OXIDES; ELECTRICAL CONDUCTIVITY; FOUR POINT PROBE; IMPURITY PHASE; SOLUBILITY RANGE; STRUCTURAL AND ELECTRICAL PROPERTIES;

VANADIUM COMPOUNDS;

EID: 84864883434 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-012-0657-1 Document Type: Article

Times cited : (20)

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