Influence of ionic Bismuth on intrinsic defects in ZnO varistors

Solid-State Electronics

Volumn 67, Issue 1, 2012, Pages 27-29

  Huan, Chen ^a   Gang, Fu ^a  

^a GUANGZHOU UNIVERSITY   (China)

Author keywords

Bi2O3 additive; Dissipation factor; Intrinsic defects; ZnO varistor

Indexed keywords

DIELECTRIC DISSIPATION; DIELECTRIC DISSIPATION FACTORS; DISSIPATION FACTOR; ELECTRON TRAPPING; INTRINSIC DEFECTS; LOAD VOLTAGES; ROOM TEMPERATURE; SUPPRESSING EFFECTS; VARISTOR CERAMICS; ZNO VARISTORS;

BISMUTH; CERAMIC MATERIALS; DEFECTS; ZINC OXIDE;

VARISTORS;

EID: 80455164566     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.07.011     Document Type: Article

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