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Volumn 27, Issue 10, 2011, Pages 944-950

Effect of doping and high-temperature annealing on the structural and electrical properties of Zn1-X NiXO(0≤X≤0.15) powders

Author keywords

Four point probe method; II VI semiconductors; Zinc oxide and doped zinc oxide

Indexed keywords

AIR ATMOSPHERE; BINARY SYSTEMS; DC METHODS; EFFECT OF DOPING; ELECTRICAL CONDUCTIVITY; FOUR-POINT PROBE METHOD; FOUR-PROBE; HIGH-TEMPERATURE ANNEALING; I-PHASE; II-VI SEMICONDUCTOR; IMPURITY PHASE; MIXED PHASE; NI-DOPED; NI-DOPING; PURE ZNO; SCANNING ELECTRON MICROSCOPE; SINGLE PHASE; SOLUBILITY LIMITS; STRUCTURAL AND ELECTRICAL PROPERTIES; WURTZITES; XRD; ZNO; ZNO POWDER;

EID: 82955211374     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1005-0302(11)60168-0     Document Type: Article
Times cited : (16)

References (31)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.