The effects of dual-active-layer modulation on a low-temperature solution-processed oxide thin-film transistor

IEEE Transactions on Electron Devices

Volumn 59, Issue 8, 2012, Pages 2149-2152

  Jeong, Woong Hee ^a   Kim, Kyung Min ^a   Kim, Dong Lim ^a   Rim, You Seung ^a   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

Author keywords

Dual active layer (DAL) modulation; In versus Zn ratio; oxide semiconductor; solution process; thickness

Indexed keywords

ELECTRICAL CHARACTERISTIC; ENERGY BARRIER HEIGHT; FIELD-EFFECT MOBILITIES; IN-VERSUS-ZN RATIO; LOW TEMPERATURES; ON/OFF RATIO; OXIDE SEMICONDUCTOR; SOLUTION PROCESS; SOLUTION-PROCESSED; SUBTHRESHOLD SWING; THICKNESS; THIN-FILM TRANSISTOR (TFTS); TWO CHANNEL;

CARRIER CONCENTRATION; ENERGY BARRIERS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; ZINC;

MODULATION;

EID: 84864770147     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2198064     Document Type: Article

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